Issue Date | Title | Author(s) |
2017 | Band gap calculation of bulk and monolayer transition metal dichalcogenides with new GVJ-2E approach within DFT framework | Gusakova, J.; Tay, B. K.; Wang, X.; Shiau, L. L.; Gusakov, V. E.; Borisenko, V. E. |
2015 | Band gap modifications of two-dimensional defected MoS2 | Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Skorodumova, N. V.; Tay, B. K. |
2017 | Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method) | Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K. |
2017 | Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e method | Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K. |
2015 | Theoretical study of defect impact on two-dimensional MoS2 | Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Waileong, C.; Gusakova, J.; Tay, B. K. |