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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10546
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dc.contributor.authorPrischepa, S. L.-
dc.contributor.authorDanilyuk, A. L.-
dc.contributor.authorTrafimenko, A. G.-
dc.contributor.authorFedotov, A. K.-
dc.contributor.authorSvito, I. A.-
dc.contributor.authorПрищепа, С. Л.-
dc.contributor.authorДанилюк, А. Л.-
dc.date.accessioned2016-12-01T09:09:50Z-
dc.date.accessioned2017-07-27T12:27:13Z-
dc.date.available2016-12-01T09:09:50Z-
dc.date.available2017-07-27T12:27:13Z-
dc.date.issued2016-
dc.identifier.citationPrischepa S. L. Negative differential resistance in n-type noncompensated silicon at low temperature / S. L. Prischepa, A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito // Applied Physics Letters. - Vol. 109, No. 22. - 2016 - P. 222104 (1-4).ru_RU
dcterms.identifier.DOIDOI: 10.1063/1.4968825-
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10546-
dc.description.abstractWe present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current.ru_RU
dc.language.isoruru_RU
dc.publisherAmerican Institute of Physicsru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectnegative differential resistanceru_RU
dc.subjectvariable range hoppingru_RU
dc.subjectcharge accumulationru_RU
dc.subjectupper Hubbard bandru_RU
dc.titleNegative differential resistance in n-type noncompensated silicon at low temperatureru_RU
dc.typeArticleru_RU
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