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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10719
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dc.contributor.authorMedvedeva, I. F.-
dc.contributor.authorMurin, L. I.-
dc.contributor.authorTolkacheva, E. A.-
dc.contributor.authorMarkevich, V. P.-
dc.date.accessioned2016-12-07T12:20:30Z
dc.date.accessioned2017-07-17T12:47:36Z-
dc.date.available2016-12-07T12:20:30Z
dc.date.available2017-07-17T12:47:36Z-
dc.date.issued2015-
dc.identifier.citationMedvedeva, I. F. Calibration factors for the determination of radiation-induced oxygen-vacancy complexes and oxygen dimer concentrations in silicon crystals by infrared absorption / I. F. Medvedeva other // Медэлектроника – 2015. Средства медицинской электроники и новые медицинские технологии : сборник научных статей IX Международная научно-техническая конференция (Минск, 4 – 5 декабря 2015 г.). – Минск : БГУИР, 2015. – С. 170 – 173.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10719-
dc.description.abstractOn the base of analysis of the data obtained the calibration factors for the determination of concentrations of the radiation-induced oxygen-vacancy complexes in silicon crystals by infrared absorption are deduced. The calibration coefficient for the determination of the oxygen dimer concentration is estimated as well.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.titleCalibration factors for the determination of radiation-induced oxygen-vacancy complexes and oxygen dimer concentrations in silicon crystals by infrared absorptionru_RU
dc.typeArticleru_RU
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