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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10961
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dc.contributor.authorKovalevskii, A. A.-
dc.contributor.authorStrogova, A.S.-
dc.contributor.authorKomar, O. M.-
dc.contributor.authorTzybul'skii, V. V.-
dc.date.accessioned2016-12-22T14:57:29Z-
dc.date.accessioned2017-07-27T12:29:21Z-
dc.date.available2016-12-22T14:57:29Z-
dc.date.available2017-07-27T12:29:21Z-
dc.date.issued2016-
dc.identifier.citationInvestigation of Influence of Cleanliness of the Surface Substrate on Formation and Transformation of Silicon-Germanium Nanoclusters / А. A. Kovalevskii and other // American Journal of Physical Chemistry and Chemical Physics, - 2016. – Vol. 1. - № 1. – 6 - 15.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10961-
dc.description.abstractEstablished that the degree surface perfection to be seen as an essential part of the general task of preparing a clean surface before the process of formation of SiGe nanoclusters and the suppression of their transformation from nanoscale to microsizes. A small displacement of the surface atoms of complex structures on a clean surface with the formation of bonds of Ge -Ge or Si- Si is beneficial for self-organization of nanoclusters SiGe.ru_RU
dc.language.isoenru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectMonogermaneru_RU
dc.subjectHydrogenru_RU
dc.titleInvestigation of Influence of Cleanliness of the Surface Substrate on Formation and Transformation of Silicon-Germanium Nanoclustersru_RU
dc.typeArticleru_RU
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