https://libeldoc.bsuir.by/handle/123456789/28211
Title: | Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure |
Authors: | Velichko, O. I. Aksenov, V. V. |
Keywords: | доклады БГУИР;silicon;SiGe;impurity;defect;diffusion equation;analytical solution |
Issue Date: | 2017 |
Publisher: | БГУИР |
Citation: | Velichko, O. I. Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure / O. I. Velichko, V. V. Aksenov // Doklady BGUIR. - 2017. - Vol. 109, № 7. - Р. 20 - 24. |
Abstract: | The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation of the typical distribution of point defects in the 2-layer structure was carried out. |
URI: | https://libeldoc.bsuir.by/handle/123456789/28211 |
Appears in Collections: | №7 (109) |
File | Description | Size | Format | |
---|---|---|---|---|
Velichko_Analytical.PDF | 2.21 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.