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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/28211
Title: Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure
Authors: Velichko, O. I.
Aksenov, V. V.
Keywords: доклады БГУИР;silicon;SiGe;impurity;defect;diffusion equation;analytical solution
Issue Date: 2017
Publisher: БГУИР
Citation: Velichko, O. I. Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure / O. I. Velichko, V. V. Aksenov // Doklady BGUIR. - 2017. - Vol. 109, № 7. - Р. 20 - 24.
Abstract: The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation of the typical distribution of point defects in the 2-layer structure was carried out.
URI: https://libeldoc.bsuir.by/handle/123456789/28211
Appears in Collections:№7 (109)

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