https://libeldoc.bsuir.by/handle/123456789/29010| Title: | The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methods |
| Authors: | Ivanova, Y. Zubkov, V. |
| Keywords: | материалы конференций;contribution of thermionic components;tunnel components;heterostructures;single quantum well InGaAs/GaAs;admittance methods |
| Issue Date: | 2017 |
| Publisher: | БГУИР |
| Citation: | Ivanova, Y. The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methods / Y. Ivanova, V. Zubkov // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 120 - 123. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/29010 |
| Appears in Collections: | NDTCS 2017 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Ivanova_The.PDF | 355.57 kB | Adobe PDF | View/Open |
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