| DC Field | Value | Language |
|---|
| dc.contributor.author | Baranava, M. S. | - |
| dc.contributor.author | Najbuk, M. | - |
| dc.contributor.author | Hvazdouski, D. C. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2018-01-09T12:12:14Z | - |
| dc.date.available | 2018-01-09T12:12:14Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices / M. Baranava and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 191 - 192. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/29053 | - |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | electrophysical properties | ru_RU |
| dc.subject | metals chalcogenides structures | ru_RU |
| dc.title | Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2017
|
