| DC Field | Value | Language |
|---|
| dc.contributor.author | Dvornikov, O. V. | - |
| dc.contributor.author | Lovshenko, I. | - |
| dc.contributor.author | Stempitsky, V. | - |
| dc.contributor.author | Khanko, V. T. | - |
| dc.date.accessioned | 2018-01-09T12:45:08Z | - |
| dc.date.available | 2018-01-09T12:45:08Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness / O. Dvornikov and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 150 - 155. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/29062 | - |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | junction field-effect transistor | ru_RU |
| dc.subject | increased radiation hardness | ru_RU |
| dc.title | Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2017
|
