Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29079
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSkachkova, V.-
dc.date.accessioned2018-01-09T13:47:48Z-
dc.date.available2018-01-09T13:47:48Z-
dc.date.issued2017-
dc.identifier.citationSkachkova, V. Electronic properties of phosphorene with vacancies: ab initio study / V. Skachkova // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 195 - 197.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/29079-
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectelectronic propertiesru_RU
dc.subjectphosphoreneru_RU
dc.titleElectronic properties of phosphorene with vacancies: ab initio studyru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2017

Files in This Item:
File Description SizeFormat 
Skachkova_Electronic.PDF1.8 MBAdobe PDFView/Open
Show simple item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.