Please use this identifier to cite or link to this item:
https://libeldoc.bsuir.by/handle/123456789/29081
| Title: | Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model |
| Authors: | Volcheck, V. |
| Keywords: | материалы конференций;gate leakage current;Schottky diode;phonon-assisted tunneling model |
| Issue Date: | 2017 |
| Publisher: | БГУИР |
| Citation: | Volcheck, V. Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model / V. Volcheck // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 178 - 180. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/29081 |
| Appears in Collections: | NDTCS 2017
|
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