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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29228
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dc.contributor.authorVakulov, Z. E.-
dc.contributor.authorZamburg, E. G.-
dc.contributor.authorGolosov, D. A.-
dc.contributor.authorZavadski, S.M.-
dc.contributor.authorDostanko, A. P.-
dc.contributor.authorMiakonkikh, A. V.-
dc.contributor.authorKlemente, I. E.-
dc.contributor.authorRudenko, K. V.-
dc.contributor.authorAgeev, O. A.-
dc.date.accessioned2018-01-12T12:38:06Z-
dc.date.available2018-01-12T12:38:06Z-
dc.date.issued2017-
dc.identifier.citationInfluence of target-substrate distance during pulsed laser deposition on properties of LiNbO3 thin films / Z. E. Vakulov and others // Journal of Physics: Conf. Series. – 2017. – Vol. 917. – Рр. 032024.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/29228-
dc.description.abstractThis paper shows the results of studying the influence of target-substrate distance during pulsed laser deposition on electrical properties of LiNbO3 thin films. It has been shown that changing the target-substrate distance we can obtain thin films with a different composition. EDX spectra indicate that the LiNbO3 thin films fabricated under 120 mm target-substrate distance depleted Nb (0.7 atm. %) compare to LiNbO3 films fabricated under 20 mm target-substrate distance (11.0 atm. %). Varying target-substrate distance in the range from 20 mm to 120 mm charge carrier mobility increasing from 24 cm2/Vcenterdots to 395 cm2/Vcenterdots and concentration of charge carrier decreasing from 3centerdot1013 cm-3 to 1centerdot1012 cm-3. Obtained results can be used under development and fabrication of integral acousto-optic and surface acoustic wave (SAW) devices.ru_RU
dc.language.isoenru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectпрактическая эффективностьru_RU
dc.subjectсовременная математикаru_RU
dc.subjectрациональностьru_RU
dc.titleInfluence of target-substrate distance during pulsed laser deposition on properties of LiNbO3 thin filmsru_RU
dc.typeСтатьяru_RU
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