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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29371
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dc.contributor.authorKovalevskii, A. A.-
dc.contributor.authorStrogova, A. S.-
dc.contributor.authorKomar, O. M.-
dc.date.accessioned2018-01-18T08:20:10Z-
dc.date.available2018-01-18T08:20:10Z-
dc.date.issued2017-
dc.identifier.citationKovalevskii, A. A. Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium / A. A. Kovalevskii, A. S. Strogova, O. M. Komar // Polycrystalline Films: Characteristics, Applications and Research, editor Alfred L. Davis. Book. – 2017. – Chapter 3. – Р. 59 – 74.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/29371-
dc.description.abstractThe impact of germanium as isovalent impurity on the process of formation of nanostructured films of polycrystalline silicon doped with germanium is investigated.ru_RU
dc.language.isoenru_RU
dc.publisherNova Science Publishersru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectpolycrystalline siliconru_RU
dc.subjectgermaniumru_RU
dc.subjectnanoclustersru_RU
dc.titleFormation of Nanostructured Films of Polycrystalline Silicon Doped with Germaniumru_RU
dc.typeСтатьяru_RU
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