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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29487
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dc.contributor.authorKolesov, E. A.-
dc.contributor.authorTivanov, M. S.-
dc.contributor.authorKorolik, O. V.-
dc.contributor.authorApel, P. Yu.-
dc.contributor.authorSkuratov, V. A.-
dc.contributor.authorSaad, A. M.-
dc.contributor.authorKomissarov, I. V.-
dc.contributor.authorSwic, A.-
dc.contributor.authorŻukowski, P. V.-
dc.contributor.authorKoltunowicz, T. N.-
dc.date.accessioned2018-01-23T13:26:33Z-
dc.date.available2018-01-23T13:26:33Z-
dc.date.issued2017-
dc.identifier.citationRaman study of CVD graphene irradiated by swift heavy ions / E. A. Kolesov and others // Journal of nano- and electronic physics.- 2017 .- Vol. 9 No 3. - P. 03020.- DOI : 10.21272/jnep.9(3).03020.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/29487-
dc.description.abstractCVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2) and characterized by Raman spectroscopy. The defectiveness of pristine graphene was found to be dominated by grain boundaries while after irradiation it was determined by both grain boundaries and vacancies. Respectively, average inter-defect distance decreased from~ 24 to~ 13 nm. Calculations showed that the ion irradiation resulted in a decrease in charge carrier mobility from~ 4.0× 103 to~ 1.3• 103 cm2/V s. The results of the present study can be used to control graphene structure, especially vacancies concentration, and charge carrier mobility.ru_RU
dc.language.isoenru_RU
dc.publisherСумский государственный университетru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectirradiated grapheneru_RU
dc.subjectdefectsru_RU
dc.subjectraman spectroscopyru_RU
dc.subjectCVDru_RU
dc.subjectswift heavy ionsru_RU
dc.titleRaman study of CVD graphene irradiated by swift heavy ionsru_RU
dc.typeСтатьяru_RU
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