| DC Field | Value | Language |
|---|
| dc.contributor.author | Shalatonin, V. | - |
| dc.contributor.author | Mishchenko, V. | - |
| dc.date.accessioned | 2018-04-19T11:25:34Z | - |
| dc.date.available | 2018-04-19T11:25:34Z | - |
| dc.date.issued | 2003 | - |
| dc.identifier.citation | Shalatonin, V. Period multiplication and chaotic dynamics in a semiconductor with the Gunn instabilit / V. Shalatonin, V. Mishchenko // Доклады БГУИР. - 2003. - № 4. - С. 59 - 62. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/31076 | - |
| dc.description.abstract | На основе дрейф-диффузионной модели разработана программа расчета процессов
переноса и нелинейной динамики колебаний в GaAs полупроводниках с эффектом Ганна.
Показано, что нелинейное взаимодействие характеризуется умножением периода колебаний
и возникновением странных хаотических аттракторов. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | доклады БГУИР | ru_RU |
| dc.subject | nonlinear dynamics | ru_RU |
| dc.subject | arsenid gallium | ru_RU |
| dc.subject | strange attractor | ru_RU |
| dc.subject | chaotic oscillations | ru_RU |
| dc.subject | Gunn- effect model | ru_RU |
| dc.title | Period multiplication and chaotic dynamics in a semiconductor with the Gunn instability | ru_RU |
| dc.type | Статья | ru_RU |
| local.description.annotation | A drift-diffusion Gunn effect model is used to analyse complex behaviour of the natural and
driven Gunn oscillations. The results of the numerical simulation are presented. It was shown that
Gunn devices might exhibit quite complicated nonlinear dynamics, such as period multiplication and
strange chaotic attractors. | - |
| Appears in Collections: | №4
|
