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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/31650
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dc.contributor.authorХодарина, Л. П.-
dc.contributor.authorЗеленин, В. А.-
dc.contributor.authorГурский, Л. И.-
dc.date.accessioned2018-05-28T08:43:04Z-
dc.date.available2018-05-28T08:43:04Z-
dc.date.issued2009-
dc.identifier.citationХодарина, Л. П. Формирование ямок на поверхности Si (111) при термообработке структур Si/Al / Л. П. Ходарина, В. А. Зеленин, Л. И. Гурский // Доклады БГУИР. - 2009. - № 3 (41). - С. 73 - 78.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/31650-
dc.description.abstractThe paper discusses the mechanisms responsible for formation of dimples on the Si (111) surface during heat treatment of Si/Al structures. The determination is made of the major regularities of their formation in actual structures.ru_RU
dc.language.isoruru_RU
dc.publisherБГУИРru_RU
dc.subjectдоклады БГУИРru_RU
dc.titleФормирование ямок на поверхности Si (111) при термообработке структур Si/Alru_RU
dc.title.alternativeFormation of dimples on the Si (111) surface during heat treatment of Si/Al structuresru_RU
dc.typeСтатьяru_RU
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