| DC Field | Value | Language |
|---|
| dc.contributor.author | Borzdov, V. M. | - |
| dc.contributor.author | Borzdov, A. | - |
| dc.contributor.author | Speransky, D. | - |
| dc.contributor.author | Pozdnyakov, D. | - |
| dc.date.accessioned | 2018-10-01T06:49:09Z | - |
| dc.date.available | 2018-10-01T06:49:09Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Simulation of impact ionization process in deep submicron n-channel MOSFETS / V. Borzdov and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 67 – 69. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33066 | - |
| dc.description.abstract | The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with
length is performed. The effective threshold energy of impact ionization process in the MOSFET is
calculated in the framework of Keldysh model | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | n-channel MOSFET | ru_RU |
| dc.subject | Monte Carlo | ru_RU |
| dc.title | Simulation of impact ionization process in deep submicron n-channel MOSFETS | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
