| DC Field | Value | Language |
|---|
| dc.contributor.author | Kovalchuk, N. G. | - |
| dc.contributor.author | Nigerish, K. A. | - |
| dc.contributor.author | Mikhalik, M. M. | - |
| dc.contributor.author | Kargin, N. I. | - |
| dc.contributor.author | Komissarov, I. V. | - |
| dc.contributor.author | Prischepa, S. L. | - |
| dc.date.accessioned | 2018-11-22T13:07:20Z | - |
| dc.date.available | 2018-11-22T13:07:20Z | - |
| dc.date.issued | 2018 | - |
| dc.identifier.citation | Possibility of determining the graphene doping level using Raman spectra / N. G. Kovalchuk and others // Journal of Applied Spectroscopy. - 2018. - Vol. 84, No. 6. - Pр. 995 - 998. - DOI : https://doi.org/10.1007/s10812-018-0576-x. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33587 | - |
| dc.description.abstract | Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Springer Science+Business Media | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | graphene doping | ru_RU |
| dc.subject | Raman spectrum | ru_RU |
| dc.subject | chemical vapor deposition | ru_RU |
| dc.title | Possibility of determining the graphene doping level using Raman spectra | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
