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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33880
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dc.contributor.authorTrafimenko, A. G.-
dc.contributor.authorDanilyuk, A. L.-
dc.date.accessioned2018-12-14T09:41:46Z-
dc.date.available2018-12-14T09:41:46Z-
dc.date.issued2018-
dc.identifier.citationTrafimenko, A. G. Emission properties of an array of silicon nanocones / A. G. Trafimenko, A. L. Danilyuk // Materials physics and mechanics (MPM). – 2018. – No 1, Vol. 39. – 2018. – P. 75 – 80. – DOI: 10.18720/MPM.3912018_12.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/33880-
dc.description.abstractIn this paper we investigate the emission properties of an array of silicon nanocones containing cobalt nanoparticles at their vertices. Nanocones are formed on a silicon substrate by deposition a cobalt film, processing it to obtain an array of nanoparticles with a diameter of 20-30 nm and subsequent etching of silicon. Nanocones of silicon are separated from the conductive substrate by a layer of silicon oxynitride with the thickness of 8 nm. The results of modeling the current transfer in Si(Sb)/SiOxNy/Co nanocones and an estimation of their emission properties are presented.ru_RU
dc.language.isoenru_RU
dc.publisherИнститут проблем машиноведения РАНru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectelectron transportru_RU
dc.subjectemissionru_RU
dc.subjectnanoconeru_RU
dc.subjectoxynitrideru_RU
dc.subjectsiliconru_RU
dc.titleEmission properties of an array of silicon nanoconesru_RU
dc.typeСтатьяru_RU
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