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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33941
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dc.contributor.authorMuratova, E. N.-
dc.contributor.authorMoshnikov, V. A.-
dc.contributor.authorLuchinin, V. V.-
dc.contributor.authorBobkov, A. A.-
dc.contributor.authorVrublevsky, I. A.-
dc.contributor.authorChernyakova, E. V.-
dc.contributor.authorTerukov, E. I.-
dc.date.accessioned2018-12-21T09:03:12Z-
dc.date.available2018-12-21T09:03:12Z-
dc.date.issued2018-
dc.identifier.citationThermal-Conductive Boards Based on Aluminum with an Al2O3 Nanostructured Layer for Products of Power Electronics / E. N. Muratova and other // Technical Physics. – 2018. – Vol 63, № 11. – P. 1626 – 1628. – DOI: 10.1134/S1063784218110191.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/33941-
dc.description.abstractThe experimental results of electrical and thermal characteristics of circuit boards based on aluminum with a nanostructured layer of anodic aluminum oxide and copper conductors for assembling highpower field-effect transistors have been considered. It has been shown that the presence of a thin dielectric layer and thick aluminum base with high thermal conductivity provides a uniform distribution of heat generated by the active element over the entire volume of the board without formation of local regions with increased temperature. The experimental results have shown that the temperature gradient between the heat source and anodic aluminum oxide surface is about 17–18°C at a surface heat power of 4.4 W/cm2.ru_RU
dc.language.isoenru_RU
dc.publisherPleiades Publishingru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectthermal characteristicsru_RU
dc.subjectnanostructured layerru_RU
dc.titleThermal-Conductive Boards Based on Aluminum with an Al2O3 Nanostructured Layer for Products of Power Electronicsru_RU
dc.typeСтатьяru_RU
Appears in Collections:Публикации в зарубежных изданиях

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