| DC Field | Value | Language |
|---|
| dc.contributor.author | Chernyakova, E. V. | - |
| dc.contributor.author | Vrublevsky, I. A. | - |
| dc.contributor.author | Muratova, E. N. | - |
| dc.contributor.author | Moshnikov, V. A. | - |
| dc.date.accessioned | 2018-12-21T10:44:15Z | - |
| dc.date.available | 2018-12-21T10:44:15Z | - |
| dc.date.issued | 2018 | - |
| dc.identifier.citation | Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties / Chernyakova E. V. and other // IJournal of Physics: Conf. Series 1121 012010. – 2018. – doi :10.1088/1742-6596/1121/1/012010. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33946 | - |
| dc.description.abstract | The paper presents the results of studies of the formation of film-metal oxide
nanostructures with islet tantalum inclusions on the basis of anodizing processes of bilayer Ta-
Al films. The surface resistivity and the temperature coefficient of resistance of such
nanostructures were studied. The results obtained show that the proposed method allows us to
copy completely the cellular-porous structure of anodic alumina and to form a nanostructured
tantalum film of islet character with a dielectric phase in places of pores. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Institute of Physics and IOP Publishing Limited | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | anodic aluminum oxide | ru_RU |
| dc.subject | temperature coefficient of resistance | ru_RU |
| dc.title | Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
