| DC Field | Value | Language |
|---|
| dc.contributor.author | Skachkova, V. A. | - |
| dc.contributor.author | Baranava, M. S. | - |
| dc.contributor.author | Hvazdouski, D. C. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2019-01-03T11:44:01Z | - |
| dc.date.available | 2019-01-03T11:44:01Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Electronic properties of graphene-based heterostructures / V. A. Skachkova and other // Journal of Physics: Conference Series. – 2017. – 917. – P. 092012. – doi :10.1088/1742-6596/917/9/092012. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/34035 | - |
| dc.description.abstract | Heterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | IOPscience | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | ab initio simulation | ru_RU |
| dc.subject | DFT | ru_RU |
| dc.subject | dichalcogenide | ru_RU |
| dc.subject | graphene | ru_RU |
| dc.subject | heterostructure | ru_RU |
| dc.subject | ZnS | ru_RU |
| dc.subject | ZnO | ru_RU |
| dc.title | Electronic properties of graphene-based heterostructures | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
