https://libeldoc.bsuir.by/handle/123456789/37558| Title: | Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position |
| Authors: | Krivosheeva, A. V. Shaposhnikov, V. L. Borisenko, V. E. Lazzari, J. L. |
| Keywords: | публикации ученых;2D heterostructure;dichalcogenide;electronic property;impurity;substituting position |
| Issue Date: | 2019 |
| Publisher: | World Scientic Publishing Company |
| Citation: | Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position / A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J.-L. Lazzari // International Journal of Nanoscience. – 2019. – Vol. 18, № 3-4. – P. 1940007-1-1940007-4. – DOI : 10.1142/S0219581X19400076. |
| Abstract: | An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lead to metallic properties depending on the impurity position and concentration. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/37558 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Krivosheeva_Electronic.pdf | 509.34 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.