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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/37641
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dc.contributor.authorScagliotti, M.-
dc.contributor.authorSalvato, M.-
dc.contributor.authorDe Crescenzi, M.-
dc.contributor.authorCastrucci, P.-
dc.contributor.authorKovalchuk, N. G.-
dc.contributor.authorKomissarov, I. V.-
dc.contributor.authorPrischepa, S. L.-
dc.contributor.authorCatone, D.-
dc.contributor.authorMario, L. Di-
dc.contributor.authorBoscardin, M.-
dc.contributor.authorCrivellari, M.-
dc.date.accessioned2019-12-03T11:34:40Z-
dc.date.available2019-12-03T11:34:40Z-
dc.date.issued2019-
dc.identifier.citation2D carbon material/silicon heterojunctions for fast response self-powered photodetector / M. Scagliotti [and others] // International Journal of Nanoscience. – 2019. – Vol. 18, No. 3&4. – P. 1940088 (1-4). – DOI: https://doi.org/10.1142/S0219581X1940088X.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/37641-
dc.description.abstractPhotodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/ silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275 nm) to infrared (1150 nm). Applying a gate voltage VG, the rise time decreases down to about 1 ns, making our devices comparable to most commercial PDsru_RU
dc.language.isoenru_RU
dc.publisherWorld Scientific Publishing Co Pte Ltdru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectgrapheneru_RU
dc.subjectcarbon nanotuberu_RU
dc.subjectheterojunctionru_RU
dc.subjectphotodetectorru_RU
dc.subjectpulsed laserru_RU
dc.title2D carbon material/silicon heterojunctions for fast response self-powered photodetectorru_RU
dc.typeСтатьяru_RU
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