Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38237
Title: Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Authors: Huan, Y. W.
Xu, K.
Liu, W. J.
Zhang, H.
Golosov, D. A.
Xia, C. T.
Yu, H. Y.
Wu, X. H.
Sun, Q. Q.
Ding, S. J.
Keywords: публикации ученых;Nitridation treatment;Band alignment;Few-layer MoS2;β-Ga2O3
Issue Date: 2019
Publisher: Springer Science+Business Media
Citation: Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation / Huan Y. W. [and others] // Nanoscale research letters. – 2019. – Vol. 14, № 1. – P. 360 – 368. – DOI: https://doi.org/10.1186/s11671-019-3181-x.
Abstract: Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3(2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.
URI: https://libeldoc.bsuir.by/handle/123456789/38237
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Huan_Investigation.pdf1.17 MBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.