Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model

Abstract

The leakage current in the AlGaN Schottky diode under a reverse bias is simulated and compared within the frameworks of the thermionic emission–diffusion and phonon-assisted tunneling models. It is shown that the phonon-assisted tunneling model is suitable to describe the reverse-bias characteristic of the AlGaN Schottky contact and can also be applied to calculate the gate leakage current in the AlGaN/GaN high electron mobility transistor.