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dc.contributor.authorDao Dinh Ha-
dc.contributor.authorTrung Tran Tuan-
dc.contributor.authorVolcheck, V. S.-
dc.contributor.authorStempitsky, V. R.-
dc.date.accessioned2020-02-12T12:07:56Z-
dc.date.available2020-02-12T12:07:56Z-
dc.date.issued2019-
dc.identifier.citationIron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 308 – 312. – DOI: https://doi.org/10.1109/ATC.2019.8924506.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/38540-
dc.description.abstractThe effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction.ru_RU
dc.language.isoenru_RU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)ru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectgallium nitrideru_RU
dc.subjecttrapru_RU
dc.subjecttransistorru_RU
dc.subjectsimulationru_RU
dc.titleIron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysisru_RU
dc.typeСтатьяru_RU
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