https://libeldoc.bsuir.by/handle/123456789/38929| Title: | Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition |
| Authors: | Danilyuk, A. L. Prischepa, S. L. Trafimenko, A. G. Fedotov, A. K. Svito, I. A. Kargin, N. I. |
| Keywords: | публикации ученых;charge carrier instability;correlated electron system;upper Hubbard band;delocalization |
| Issue Date: | 2020 |
| Publisher: | Institute of Physics |
| Citation: | Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition / A. L. Danilyuk [and other] // Journal of Physics Condensed Matter. – 2020. – Vol. 32. – P. 225702 (1-10). – 10.1088/1361-648X/ab720e. |
| Abstract: | We report on the electric transport properties of Si heavily doped with Sb at concentration just below the insulator-to-metal transition in the temperature range 1.9 – 3.0 K for current density J < 0.2 A/cm2. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/38929 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Prischepa_Low.pdf | 121.94 kB | Adobe PDF | View/Open |
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