Features of nanoclusters formation in the deposition mode of superthin films SI(GE)

Abstract

With the use of the scanning, transmission and atomic-force microscopy and Raman scattering of ranges the features of nanoclusters formation of Si, Ge, and solid SiGe solution the deposition mode of superthin films Si(Ge) are studied. The leading mechanism in the process of films crystallization with silicon, germanium and silicongermanium nanostructures alloyed by Ge on all types of initial surfaces of substrates is the migration of silicon and germanium atoms on a surface of films are established. For the self-organization of SiGe nanoclusters a small shift of surface atoms of complex structures on a clean surface with the formation of bonds like Ge–Ge or Si–Si is favorable. It is caused by the fact that under the thermal treatment the atoms rejected from an ideal position in a crystal grid create additional force fields and it leads to the change of elastic properties of the whole nanocrystal.