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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/41641
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dc.contributor.authorOutkina, E. A.-
dc.contributor.authorVorobyova, A. I.-
dc.contributor.authorKhodin, A. A.-
dc.date.accessioned2020-12-11T10:10:53Z-
dc.date.available2020-12-11T10:10:53Z-
dc.date.issued2020-
dc.identifier.citationOutkina, E. A. Graded bandgap nanostructured SnS-based photocells / E. A. Outkina, A. I. Vorobyova, A. A. Khodin // Applied Physics A. – 2020. – Vol.126, № 899. – DOI: https://doi.org/10.1007/s00339-020-04081-5.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/41641-
dc.description.abstractTin sulfide SnS, SnS2 thin films have been fabricated and investigated for solar cell application as prospective inexpensive and environmentally safe material. In this study, we propose and analyse, using SCAPS code simulation, a simple graded bandgap heterostructure solar cell structure based on nanostructured bandgap-engineered SnS/SnS2 active layers showing conversion efficiency up to ~ 14% for non-graded and ~ 16% for graded bandgap heterostructure.ru_RU
dc.language.isoenru_RU
dc.publisherSpringerru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectnanostructuresru_RU
dc.subjectchemical depositionru_RU
dc.titleGraded bandgap nanostructured SnS-based photocellsru_RU
dc.typeСтатьяru_RU
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