| DC Field | Value | Language |
|---|
| dc.contributor.author | Bodnar, I. V. | - |
| dc.contributor.author | Feschenko, A. A. | - |
| dc.contributor.author | Khoroshko, V. V. | - |
| dc.date.accessioned | 2021-02-03T06:26:13Z | - |
| dc.date.available | 2021-02-03T06:26:13Z | - |
| dc.date.issued | 2020 | - |
| dc.identifier.citation | Bodnar, I. V. Band Gap of (In2S3)x(AgIn5S8)1-x Single-Crystal Alloys / I. V. Bodnar, A. A. Feschenko, V. V. Khoroshko // Semiconductors. – 2020. – Vol. 54, №.12. – P. 1611–1615. – DOI: 10.1134/S1063782620120039. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/42811 | - |
| dc.description.abstract | In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman
method. The composition and structure of the crystals are determined. It is established that both the initial
compounds and their alloys crystalize with the formation of the cubic spinel structure. The unit-cell parameters of the single crystals are calculated, and the dependences of these parameters on the alloy composition
are constructed. It is shown that, in the system, Vegard’s law is satisfied. The transmittance spectra of the
crystals in the region of the fundamental absorption edge are studied at room temperature, and the band gap
(Eg) is determined. It is shown that Eg varies with the composition parameter x, with some deviation from a
linear dependence. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Springer | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | single crystals | ru_RU |
| dc.subject | crystal structure | ru_RU |
| dc.subject | band gap | ru_RU |
| dc.title | Band Gap of (In2S3)x(AgIn5S8)1-x Single-Crystal Alloys | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
