Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45029
Title: A surface adsorption model for electroless cobalt alloy thin films
Authors: Shacham-Diamand, Y.
Sverdlov, Y.
Bogush, V. A.
Ofek-Almog, R.
Keywords: публикации ученых;Cobalt;Tungsten;Phosphorous;Boron;Electroless deposition
Issue Date: 2007
Publisher: Springer-Verlag
Citation: A surface adsorption model for electroless cobalt alloy thin films / Shacham-Diamand Y. [et al.] // Journal of Solid State Electrochemistry. – 2007. – Vol. 11, № 7. – P. 929–938. – doi: DOI 10.1007/s10008-007-0285-5.
Abstract: Thin cobalt alloy films have been obtained using electroless deposition solution with two reducing agents: dimethylamine borane (DMAB) and sodium hypophosphite. This system allows spontaneous and self-activated deposition of barrier layers on Cu lines and via contacts for ultra large scale integration (ULSI) interconnects applications. This work presents a study of the solution composition effects on the material properties and composition of the films. First, we present the deposition rates, the electrical resistance, the various element profiles in the thin film, and the thin film roughness. Next, we discuss the film ’ s composition and its dependence on the ratio between the reducing agents composition in the solution. The experimental results suggest that the film phosphorous and boron composition is determined by the surface adsorption rates of the reducing agents. Therefore, a surface co-adsorption model of the two reducing agents is proposed, formulated, analyzed, and compared to the experimental results. Finally, we discuss the model and its significance to the formation of high-quality ultra-thin barrier layers.
URI: https://libeldoc.bsuir.by/handle/123456789/45029
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Shacham_Diamand_A.pdf417.39 kBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.