| DC Field | Value | Language |
|---|
| dc.contributor.author | Kostrov, G. | - |
| dc.contributor.author | Zav'yalov, D. | - |
| dc.date.accessioned | 2021-11-05T07:43:46Z | - |
| dc.date.available | 2021-11-05T07:43:46Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Kostrov, G. Influence of supply voltage on the velocity of flight of domains in a gunn diode / G. Kostrov, D. Zav'yalov // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 56–58. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/45818 | - |
| dc.description.abstract | At the present time, more and more attention is paid to modeling physical processes in
semiconductor radioelements operating in the gigahertz and terahertz ranges. With the help of an accurate physical model, it becomes possible to predict changes in radiation characteristics due to factors such as semiconductor material, doping, supply voltage, and others. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | conference proceedings | ru_RU |
| dc.subject | gunn diode | ru_RU |
| dc.subject | semiconductor | ru_RU |
| dc.subject | radioelements | ru_RU |
| dc.title | Influence of supply voltage on the velocity of flight of domains in a gunn diode | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2021
|
