Tunneling and magnetoresistance in ferromagnet/wide-gap semiconductor/ferromagnet nanostructure

Abstract

Tunneling coefficient, current density and TMR in FM/WGS/FM structure based on two-band Franc-Keine model and phase function method were calculated. It was shown that parameter oscillates at applied bias increasing. It explains by the presence of the alternate areas with the high and low tunneling transparency, where tunneling electrons layers exist. This area burst because of the changing of the Fermi quasi-layer position and generation of the additional tunneling channels in two-band wide gape semiconductor. Oscillation of the transmission coefficient sustain phase and amplitude changings. Represented dependencies of the TMR from the applied bias are explained by the combination spin polarization of the tunneling electrons and non-monotonous dependence transmission coefficient from energy.