https://libeldoc.bsuir.by/handle/123456789/45886| Title: | Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system |
| Authors: | Volcheck, V. S. Lovshenko, I. Yu. Stempitsky, V. R. |
| Keywords: | материалы конференций;conference proceedings;design optimization;transistors;graphene heat-removal system |
| Issue Date: | 2021 |
| Publisher: | БГУИР |
| Citation: | Volcheck, V. Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system / V. Volcheck, I. Lovshenko, V. Stempitsky // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 63–64. |
| Abstract: | This paper is dedicated to the design optimization of the GaN HFET with a graphene heat-removal system enhanced by a trench in the passivation layer filled by diamond. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/45886 |
| Appears in Collections: | NDTCS 2021 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Volcheck_Design.pdf | 247.62 kB | Adobe PDF | View/Open |
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