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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46446
Title: Robust performance and stability of In2Оз thin-film transistors with atomic-layer-deposited channels
Authors: Qian Ma
Letao Zhang
Shengdong Zhang
Keywords: материалы конференций;thinfilm transistors;Atomic-layer-deposition
Issue Date: 2019
Publisher: БГУИР
Citation: Qian Ma. Robust performance and stability of In2Оз thin-film transistors with atomic-layer-deposited channels / Qian Ma, Letao Zhang, Shengdong Zhang // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 87.
Abstract: Atomic-layer-deposition (ALD) ln20 3 thinfilm transistors (TFTs) were fabricated under a maximum processing temperature of 200 °C. In order to reduce the concentration of oxygen vacancies in the ln20 3 channel, 0 2 plasma treatment was carried out on the TFTs by plasmaenhanced chemical vapor deposited (PECVD). The ln20 3 TFT treated at 200 °C for 240s exhibited good performance such as a field-effect mobility of 11 cm2/Vs, a threshold voltage (Vth) of 0.9 V, a subthreshold swing of 0.38 V/dec, and an on/off current ratio of 107 In addition, the device exhibits a small negative threshold voltage shift (A Vth) during negative gate bias stress. However, it showed a more pronounced A Vth under positive bias stress with a characteristic turnaround behavior from a positive A Vth to a negative A Vth. The positive AV m is attributed to the charge trapping effect, and the abnormal negative AVth should due to the hydrogen incorporated into the film.
URI: https://libeldoc.bsuir.by/handle/123456789/46446
Appears in Collections:EuroDisplay 2019

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