A stable FHD display device based on BCE IGZO TFTs

Wan, G.; Ge, S.; Li, S.; Gong, C.; Lin, X.

Full metadata record

DC Field	Value	Language
dc.contributor.author	Wan, G.	-
dc.contributor.author	Ge, S.	-
dc.contributor.author	Li, S.	-
dc.contributor.author	Gong, C.	-
dc.contributor.author	Lin, X.	-
dc.date.accessioned	2021-12-23T08:27:36Z	-
dc.date.available	2021-12-23T08:27:36Z	-
dc.date.issued	2019	-
dc.identifier.citation	A stable FHD display device based on BCE IGZO TFTs / G. Wan [et al.] // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 85–86.	ru_RU
dc.identifier.uri	https://libeldoc.bsuir.by/handle/123456789/46448	-
dc.description.abstract	In this work, the impact of the deposition process of the SiOx passivation layer on the electrical properties of the BCE IGZO TFTs has been studied. The AVth of the TFTs are 2.52 and -1.67 V under PBTS (60°C, 30 V) and NBITS (60°C, -30 V, 4500nit) after 1 hour, respectively. The stability of these TFTs is verified in 32in FHD display devices, which still could display the picture properly after the 500-hour aging test at 60°C and 90% humidity. A stable FHD display device based on BCE IGZO TFTs was achieved.	ru_RU
dc.language.iso	en	ru_RU
dc.publisher	БГУИР	ru_RU
dc.subject	материалы конференций	ru_RU
dc.subject	thin film transistors	ru_RU
dc.subject	chemical precipitation	ru_RU
dc.title	A stable FHD display device based on BCE IGZO TFTs	ru_RU
dc.type	Статья	ru_RU
Appears in Collections:	EuroDisplay 2019