Approaches to enhance electroluminescent efficiency of light-emitting diodes based on quasi-two-dimensional perovskite

Abstract

Quasi-two-dimensional (quasi-2D) perovskites with (Ai)2(A2)n-iPbnX3n+i multi-quantum well structures are considered as the potential electroluminescence (EL) materials due to their controllable quantum confine effect which would lead a high EL efficiency. However, the quasi-2D perovskite films fabricated with solution processing technologies consist of different n phases and orientated layers, which limits the performance of quasi-2D perovskite light- emitting diodes (PeLEDs). To improve the performance of PeLEDs, it is essential to obtain perovskite thin films with both large exciton binding energy, complete surface coverage and suitable morphology. Here some approaches are developed to improve the performance of quasi-2D PeLEDs.