The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene

Abstract

A new promising semiconductor material (phosphorene) is studied using theoretical simulation. The possibilities of changing the magnitude and nature of interband transitions under the action of compressive and tensile stresses on the phosphorene crystal lattice are determined. It is found that phosphorene can be both direct-gap and indirect-gap semiconductors, depending on the magnitude and direction of stress action. Phosphorene can be used in new generation nanoelectronic devices with controlled movement of charge carriers.