| DC Field | Value | Language |
|---|
| dc.contributor.author | Vorobjova, A. I. | - |
| dc.contributor.author | Labunov, V. A. | - |
| dc.contributor.author | Outkina, E. A. | - |
| dc.contributor.author | Khodin, A. A. | - |
| dc.contributor.author | Sycheva, O. A. | - |
| dc.contributor.author | Ezovitova, T. I. | - |
| dc.coverage.spatial | Luxembourg | - |
| dc.date.accessioned | 2022-12-01T12:00:18Z | - |
| dc.date.available | 2022-12-01T12:00:18Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.citation | Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates / A. I. Vorobjova [et al.] // Russian Microelectronics. – 2022. – Vol. 51. – P. 282-294. – DOI : https://doi.org/10.1007/s00542-022-05335-3. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/49244 | - |
| dc.description.abstract | The results of a comprehensive study of the structural-
morphological and thermodynamic characteristics of the electrochemical
precipitation of Cu in transition holes with a barrier layer of TiN in
Si/SiO2 substrates by scanning electron microscopy (SEM) and
differential thermal analysis (DTA) are presented. The temperature
range that determines the heat resistance of copper (up to 750°C) and the
temperature range (up to 886°C) that determines the thermal stability of
the composite as a whole, as well as the ability to maintain the chemical
composition and ordered structure at elevated temperatures, are found. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Springer | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | differential thermal analysis | ru_RU |
| dc.subject | scanning electron microscopy | ru_RU |
| dc.title | Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
