Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/49303
Title: Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes
Authors: Fedotov, А. K.
Kharchanka, A. A.
Gumiennik, U. E.
Fedotova, J. A.
Ali Arash Ronassi
Fedotov, A. S.
Prischepa, S. L.
Chichkov, M. V.
Malinkovich, M. D.
Keywords: публикации ученых;graphene;single layer;twisted layers;carrier transport;magnetoresistance
Issue Date: 2022
Publisher: Физико-технический институт им. А. Ф. Иоффе
Citation: Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes / А. K. Fedotov [et al.] // Физика твердого тела. – 2022. – Т. 64, Вып. 7. – С. 885–886.
Abstract: Temperature and magnetic field dependencies of sheet resistance R (T,B) in polycrystalline CVD graphene, investigated in the range of 2≤ T≤ 300 K and magnetic fields 0≤ B≤ 8 T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for R (T,B) curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiO2). The twisted CVD graphene samples have demonstrated additional contribution of 2D hopping conductivity into the R (T,B) dependencies. Keywords: graphene, single layer, twisted layers, CVD, carrier transport, magnetoresistance.
URI: https://libeldoc.bsuir.by/handle/123456789/49303
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Fedotov_Sheet.pdf30.27 kBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.