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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/49738
Title: Quad-Band NGD Investigation on Crossed Resonator Interconnect Structure
Authors: Taochen Gu
Jiahui Chen
Blaise Ravelo
Fayu Wan
Mordachev, V.
Qizheng Ji
Keywords: публикации ученых;Design method;negative group delay;bandpass NGD topology;crossed resonator interconnect structure;quad-band NGD microstrip circuit
Issue Date: 2022
Publisher: Institute of Electrical and Electronics Engineers
Citation: Quad-Band NGD Investigation on Crossed Resonator Interconnect Structure / Taochen Gu [et al.] // IEEE transactions on circuits and systems–II : express briefs, 12, december 2022 / Institute of Electrical and Electronics Engineers. – USA, 2022. – Vol. 69, issue 12. – P. 4789–4793. – DOI: 10.1109/EMCEurope51680.2022.9901273.
Abstract: This brief explains why the coupling between crossed interconnect structure and straight I-lines of printed circuit board (PCB) presents bandpass (BP) negative group delay (NGD) behavior. The NGD effect is investigated with crossed resonator innovative microstrip equivalent topology. As proof of concept (POC), the influences of crossed resonator circuit physical variables on the BP-NGD behavior are illustrated by parametric study. The cross-coupled microstrip circuit POC BP-NGD responses is validated with quad-band NGD behavior. A very good agreement between calculations, simulations and experimentations state results of NGD center frequency-NGD value, (1.541-GHz, −1.84-ns), (2.397-GHz, −1.6-ns), (3.379-GHz, −1.38-ns), and (4.164-GHz, −0.91-ns) representing the 1st, 2nd, 3rd and 4th NGD band, respectively. The studied design has notable advantages in term of NGD application integration in the multi-band transceiver system simplicity and size reduction.
URI: https://libeldoc.bsuir.by/handle/123456789/49738
Appears in Collections:Публикации в зарубежных изданиях

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