| DC Field | Value | Language |
|---|
| dc.contributor.author | Krivosheeva, A. V. | - |
| dc.contributor.author | Shaposhnikov, V. L. | - |
| dc.coverage.spatial | Minsk | en_US |
| dc.date.accessioned | 2023-11-21T07:21:34Z | - |
| dc.date.available | 2023-11-21T07:21:34Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.citation | Krivosheeva, A. V. Magnetic ordering in X-Y-N 2 semiconductors (X=Mg, Zn; Y=Si, Ge) doped with Cr, Mn, and Fe atoms / A. V. Krivosheeva, V. L. Shaposhnikov // Actual Problems of Solid State Physics : proceedings of the Х International Scientific Conference, Minsk, 22–26 May 2023 / The national academy of sciences of Belarus, Scientific and practical materials research centre of the national academy of sciences of Belarus (Institute of solid state and semiconductor physics) ; ed.: V. M. Fedosyuk [et al.]. – Minsk, 2023. – P. 400–403. | en_US |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/53693 | - |
| dc.description.abstract | Structure and properties of ternary nitrides MgSiN2, MgGeN2, ZnSiN2, and ZnGeN2 are investigated using methods of density functional theory. Ways of its band gap modification by doping with Cr, Mn, and Fe atoms are estimated and conditions of magnetic ordering onset are determined. Data on the spin polarization and changes in the magnetic moments of ternary nitrides doped with 3d-elements allows to propose materials with the maximum spin polarization for application in new spintronic devices. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | А. Н. Вараксин | en_US |
| dc.subject | публикации ученых | en_US |
| dc.subject | ternary nitrides | en_US |
| dc.subject | magnetic ordering | en_US |
| dc.subject | spin polarization | en_US |
| dc.title | Magnetic ordering in X-Y-N 2 semiconductors (X=Mg, Zn; Y=Si, Ge) doped with Cr, Mn, and Fe atoms | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Публикации в изданиях Республики Беларусь
|
