DC Field | Value | Language |
dc.contributor.author | Krivosheeva, A. V. | - |
dc.contributor.author | Shaposhnikov, V. L. | - |
dc.coverage.spatial | Minsk | en_US |
dc.date.accessioned | 2023-11-21T07:28:07Z | - |
dc.date.available | 2023-11-21T07:28:07Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | Krivosheeva, A. V. Electronic and magnetic properties of doped 2D MoS2 /Ph systems / A. V. Krivosheeva, V. L. Shaposhnikov // Actual Problems of Solid State Physics : proceedings of the Х International Scientific Conference, Minsk, 22–26 May 2023 / The national academy of sciences of Belarus, Scientific and practical materials research centre of the national academy of sciences of Belarus (institute of solid state and semiconductor physics) ; ed. V. M. Fedosyuk [et al.]. – Minsk, 2023. – P. 485–487. | en_US |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/53694 | - |
dc.description.abstract | Doping of heterostructure made from two-dimensional crystals of molybdenum disulfide and phosphorene was theoretically modelled in order to reveal impurities modifying the electronic band structure of the system and having impact on its magnetic properties. Variants of substitution of one of the molybdenum atoms by Cr, Fe, Mn atoms, and one of the sulfur atoms by C, N, P ones in the MoS2 layer were simulated; doping of the phosphorene layer with C, N, S atoms was considered as well. The effect of impurities on electronic and magnetic properties of the structure is determined. | en_US |
dc.language.iso | en | en_US |
dc.publisher | А. Н. Вараксин | en_US |
dc.subject | публикации ученых | en_US |
dc.subject | dichalcogenide | en_US |
dc.subject | phosphorene | en_US |
dc.subject | monolayer | en_US |
dc.subject | heterostructure | en_US |
dc.subject | magnetic ordering | en_US |
dc.title | Electronic and magnetic properties of doped 2D MoS2 /Ph systems | en_US |
dc.type | Article | en_US |
Appears in Collections: | Публикации в изданиях Республики Беларусь
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