DC Field | Value | Language |
dc.contributor.author | Hayato Hasebe | - |
dc.contributor.author | Kazuki Kido | - |
dc.contributor.author | Haruki Takenaka | - |
dc.contributor.author | Masami Mesuda | - |
dc.contributor.author | Kaoru Toko | - |
dc.contributor.author | Migas, D. B. | - |
dc.contributor.author | Takashi Suemasu | - |
dc.coverage.spatial | Japan | en_US |
dc.date.accessioned | 2023-12-27T08:02:16Z | - |
dc.date.available | 2023-12-27T08:02:16Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets / Hayato Hasebe [et al.] // Japanese Journal of Applied Physics. – 2023. – Vol. 62. – P. SD1010. | en_US |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/53939 | - |
dc.description.abstract | BaSi2 is one of the emerging materials for thin-film solar cell applications; hence the conductivity control by impurity doping is of great importance. The formation of B-doped p-BaSi2 films has been achieved by molecular beam epitaxy and vacuum evaporation. We fabricated B-doped BaSi2 films on Si substrates at 600 °C by co-sputtering BaSi2, Ba, and B-doped Si targets, followed by post-annealing at 900 °C or 1000 °C for 5 min in an Ar atmosphere. Contrary to expectations, as-grown sample and the sample annealed at 900 °C showed n-type conductivity, while the sample annealed at 1000 °C showed p-type conductivity. The reason for the n-type conductivity was discussed based on first-principles calculationconsidering the presence of oxygen atoms in the order of 1021 cm−3. The n-type conductivity for B-doped BaSi2 is possible only when both the B and O atoms being a substitution impurity are in the same Si4 tetrahedron. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Pure and Applied Physics | en_US |
dc.subject | публикации ученых | en_US |
dc.subject | emerging materials | en_US |
dc.subject | solar cells | en_US |
dc.subject | doping | en_US |
dc.title | Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets | en_US |
dc.type | Article | en_US |
dc.identifier.DOI | https://doi.org/10.35848/1347-4065/aca4d7 | - |
Appears in Collections: | Публикации в зарубежных изданиях
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