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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/53939
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dc.contributor.authorHayato Hasebe-
dc.contributor.authorKazuki Kido-
dc.contributor.authorHaruki Takenaka-
dc.contributor.authorMasami Mesuda-
dc.contributor.authorKaoru Toko-
dc.contributor.authorMigas, D. B.-
dc.contributor.authorTakashi Suemasu-
dc.coverage.spatialJapanen_US
dc.date.accessioned2023-12-27T08:02:16Z-
dc.date.available2023-12-27T08:02:16Z-
dc.date.issued2023-
dc.identifier.citationTowards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets / Hayato Hasebe [et al.] // Japanese Journal of Applied Physics. – 2023. – Vol. 62. – P. SD1010.en_US
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/53939-
dc.description.abstractBaSi2 is one of the emerging materials for thin-film solar cell applications; hence the conductivity control by impurity doping is of great importance. The formation of B-doped p-BaSi2 films has been achieved by molecular beam epitaxy and vacuum evaporation. We fabricated B-doped BaSi2 films on Si substrates at 600 °C by co-sputtering BaSi2, Ba, and B-doped Si targets, followed by post-annealing at 900 °C or 1000 °C for 5 min in an Ar atmosphere. Contrary to expectations, as-grown sample and the sample annealed at 900 °C showed n-type conductivity, while the sample annealed at 1000 °C showed p-type conductivity. The reason for the n-type conductivity was discussed based on first-principles calculationconsidering the presence of oxygen atoms in the order of 1021 cm−3. The n-type conductivity for B-doped BaSi2 is possible only when both the B and O atoms being a substitution impurity are in the same Si4 tetrahedron.en_US
dc.language.isoenen_US
dc.publisherInstitute of Pure and Applied Physicsen_US
dc.subjectпубликации ученыхen_US
dc.subjectemerging materialsen_US
dc.subjectsolar cellsen_US
dc.subjectdopingen_US
dc.titleTowards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targetsen_US
dc.typeArticleen_US
dc.identifier.DOIhttps://doi.org/10.35848/1347-4065/aca4d7-
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