Thin-Film Capacitor Based on the Strontium Titanate Formed by the  Sol Gel Technique

Anaraki, H.; Gaponenko, N. V.; Rudenko, M. V.; Kolos, V. V.; Petlitskii, A. N.; Turtsevich, A.S.

Full metadata record

DC Field	Value	Language
dc.contributor.author	Anaraki, H.	-
dc.contributor.author	Gaponenko, N. V.	-
dc.contributor.author	Rudenko, M. V.	-
dc.contributor.author	Kolos, V. V.	-
dc.contributor.author	Petlitskii, A. N.	-
dc.contributor.author	Turtsevich, A.S.	-
dc.date.accessioned	2016-05-19T07:48:44Z	-
dc.date.accessioned	2017-07-27T12:00:22Z	-
dc.date.available	2016-05-19T07:48:44Z	-
dc.date.available	2017-07-27T12:00:22Z	-
dc.date.issued	2015	-
dc.identifier.citation	Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique / H. Аnaraki [and others] // Russian Microelectronics . – 2015. – Vol. 44, No. 6. – P. 425 – 429.	ru_RU
dc.identifier.uri	https://libeldoc.bsuir.by/handle/123456789/6873	-
dc.description.abstract	A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01.	ru_RU
dc.language.iso	en	ru_RU
dc.subject	публикации ученых	ru_RU
dc.subject	Capacitors	ru_RU
dc.subject	Dielectric losses	ru_RU
dc.subject	Film preparation	ru_RU
dc.subject	Sol – gel process	ru_RU
dc.subject	Sol – gels	ru_RU
dc.subject	Statistics	ru_RU
dc.subject	Strontium	ru_RU
dc.subject	Strontium titanates	ru_RU
dc.subject	Thin film circuits	ru_RU
dc.subject	Titanium compounds	ru_RU
dc.title	Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique	ru_RU
dc.type	Article	ru_RU
Appears in Collections:	Публикации в зарубежных изданиях