| Issue Date | Title | Author(s) |
| 2021 | Computer simulation of the operational characteristics of a microstrip silicon detector | Ha Dinh Dao; Lovshenko, I. Yu.; Roshchenko, P. S.; Shandarovich, V. T.; Stempitsky, V. R.; Tuan Trung Tran |
| 2023 | Design and Performance of Amorphous Silicon Based on Uncooled Bolometer-Type Infrared Focal Plane Arrays | Tran Van Trieu; Stempitsky, V. R.; Lovshenko, I. Yu.; Korsak, K. V.; Dao Dinh Ha |
| 2021 | Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system | Volcheck, V. S.; Lovshenko, I. Yu.; Stempitsky, V. R. |
| 2013 | Device and technology simulation of IGBT on SOI structure | Lovshenko, I. Yu.; Nelayev, V. V.; Belous, A. I.; Turtsevich, A. |
| 2019 | Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation | Lovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R. |
| 2021 | Studying the influence of microbolometer structure and geometry on the parameters of infrared detectors | Tran Van Trieu; Lovshenko, I. Yu.; Sadchenko, V.; Stempitsky, V. R. |
| 2021 | The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs | Lovshenko, I. Yu.; Voronov, A. Yu.; Roshchenko, P. S.; Ternov, R. E.; Galkin, Y. D.; Kunts, A. V.; Stempitsky, V. R.; Jinshun Bi |
