https://libeldoc.bsuir.by/handle/123456789/33072| Title: | Device and technology simulation of IGBT on SOI structure |
| Authors: | Lovshenko, I. Yu. Nelayev, V. V. Belous, A. I. Turtsevich, A. |
| Keywords: | материалы конференций;technology «Silicon–On-Insulator»;field transistors |
| Issue Date: | 2013 |
| Publisher: | БГУИР |
| Citation: | Device and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81. |
| Abstract: | Static and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/33072 |
| Appears in Collections: | NDTCS 2013 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Lovshenko_Device.pdf | 92.33 kB | Adobe PDF | View/Open |
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