| DC Field | Value | Language |
|---|
| dc.contributor.author | Prischepa, S. L. | - |
| dc.contributor.author | Fedotov, A. K. | - |
| dc.contributor.author | Svito, I. A. | - |
| dc.contributor.author | Fedotova, V. V. | - |
| dc.contributor.author | Trafimenko, A. G. | - |
| dc.contributor.author | Danilyuk, A. L. | - |
| dc.date.accessioned | 2016-11-30T12:03:16Z | - |
| dc.date.accessioned | 2017-07-27T12:27:06Z | - |
| dc.date.available | 2016-11-30T12:03:16Z | - |
| dc.date.available | 2017-07-27T12:27:06Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | Prischepa S. L. Low-Temperature Conductivity of Silicon Doped with Antimony / S. L. Prischepa and other // Semiconductors. - 2015. - Vol. 49, No. 6. - Р. 705–711. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/10521 | - |
| dc.description.abstract | A detailed analysis of the experimental temperature dependences of the resistivity of silicon doped with arsenic with a concentration of 1018 cm–3 is performed for the region 1.8 K < T < 25 K. It is shown that, as a result of cooling to a temperature lower than 4.5 K, a transition from the Mott mode with variable hopp
ping length to the mode of hopping conduction via nearest neighbors is observed, while, at T < 2.5 K, a trann
sition to the Shklovskii–Efros mechanism is possible. A model for such a temperature crossover is suggested; the model is based on simplified solution of the percolation problem with the use of an interpolation express sion for the density of states. Performed estimates show that the model is in satisfactory agreement with experr
imental data when the minimum number of adjustable parameters are used. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.title | Low-Temperature Conductivity of Silicon Doped with Antimony | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
