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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33034
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dc.contributor.authorDanilyuk, M.-
dc.contributor.authorMessanvi, A.-
dc.date.accessioned2018-09-26T08:21:31Z-
dc.date.available2018-09-26T08:21:31Z-
dc.date.issued2013-
dc.identifier.citationDanilyuk, M. The dependence of gallium nitride nanowires properties on synthesis pressure and temperature / M. Danilyuk, A. Messanvi // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 21 – 22.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/33034-
dc.description.abstractThe main task of the investigation was to perform the synthesis of gallium nitride nanowires using a low pressure chemical vapor deposition system. The nanowires were grown via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influences of catalyst, temperature and pressure on the growth of gallium nitride nanowires were explored. Optimal results were obtained at a temperature of 750oC and a pressure of 400 to 500 mTorr.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectGallium Nitrideru_RU
dc.subjectphotoluminescenceru_RU
dc.titleThe dependence of gallium nitride nanowires properties on synthesis pressure and temperatureru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2013

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