https://libeldoc.bsuir.by/handle/123456789/33034
Title: | The dependence of gallium nitride nanowires properties on synthesis pressure and temperature |
Authors: | Danilyuk, M. Messanvi, A. |
Keywords: | материалы конференций;Gallium Nitride;photoluminescence |
Issue Date: | 2013 |
Publisher: | БГУИР |
Citation: | Danilyuk, M. The dependence of gallium nitride nanowires properties on synthesis pressure and temperature / M. Danilyuk, A. Messanvi // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 21 – 22. |
Abstract: | The main task of the investigation was to perform the synthesis of gallium nitride nanowires using a low pressure chemical vapor deposition system. The nanowires were grown via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influences of catalyst, temperature and pressure on the growth of gallium nitride nanowires were explored. Optimal results were obtained at a temperature of 750oC and a pressure of 400 to 500 mTorr. |
URI: | https://libeldoc.bsuir.by/handle/123456789/33034 |
Appears in Collections: | NDTCS 2013 |
File | Description | Size | Format | |
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Danilyuk_The.pdf | 666.44 kB | Adobe PDF | View/Open |
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